BM3401-3L Datasheet | BRIGHT SEMICONDUCTOR

N-channel SMD MOSFET HBM3401-3L Package outline Plastic-Encapsulate MOSFETS N-Channel MOSFETS SOT-23-3L (1.05) (0.85) V(BR)DSS 30 V RDS(on)MAX 30mΩ@ 10V 42mΩ@4.5V 5.8A DESCRIPTION The HBM3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance. (3.02) (2.82) (2.10) (1.70) (1.70) (1.50) (2.95) (2.65) (0.67) (0.32) (0.20) (0.09) (1.25) (1.05) Dimensions in inches and (millimeters) (0.50) (0.30) Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current (t ≤10s) Pulsed drain current -...