BH62UV1601 - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit

Product Overview

BSI

BH62UV1601 Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit by BSI - Datasheet Preview — Datasheet preview – BH62UV1601

Datasheet Details

Part number	BH62UV1601
Manufacturer	BSI
File Size	173.87 KB
Description	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
Datasheet	BH62UV1601 Datasheet
Additional preview pages of the BH62UV1601 datasheet.

Product details

Description

The BH62UV1601 is a high performance, ultra low power CMOS Static Random Access Memory organized as 2,048K by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Features

Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 5.0uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 2.5uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data re.

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Published: Oct 7, 2007 |