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BH62UV1601 - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit

General Description

The BH62UV1601 is a high performance, ultra low power CMOS Static Random Access Memory organized as 2,048K by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Key Features

  • Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 5.0uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 2.5uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data re.

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Datasheet Details

Part number BH62UV1601
Manufacturer BSI
File Size 173.87 KB
Description Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
Datasheet download datasheet BH62UV1601 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit Green package materials are compliant to RoHS BH62UV1601 n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.)at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 2.5uA (Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.