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AM9945N - Dual N-Channel MOSFET

Description

The AM9945N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.

Features

  • .
  • VDS (V) =60V.
  • Low on-state resistance RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A) RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A).
  • Fast switching speed Absolute Maximum Ratings (Ta = 25℃).

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Datasheet Details

Part number AM9945N
Manufacturer BYD Microelectronics
File Size 373.59 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AM9945N Datasheet
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    BYD Microelectronics Co., Ltd. AM9945N Dual N-Channel MOSFET General Description The AM9945N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products. Features • VDS (V) =60V • Low on-state resistance RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A) RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A) • Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL LIMIT Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC)a Drain Current (pulse)b TA=25℃ TA=70℃ ID(DC) ID(pulse) ±3.6 ±3.
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