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BG200B12LY2R-I - IGBT Power Module

General Description

BYD IGBT Power Module BG200B12LY2R-I provides low switching loss as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection, it is able to take on a perfect performance in various applications up to 20KHz.

Key Features

  • z Half-bridge z Low inductance z Standard package z High short circuit capability z Ultra low conduction and switching loss z Including ultra fast & soft recovery anti-parallel FWD.

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Datasheet Details

Part number BG200B12LY2R-I
Manufacturer BYD Microelectronics
File Size 801.96 KB
Description IGBT Power Module
Datasheet download datasheet BG200B12LY2R-I Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BG200B12LY2R-I IGBT Power Module VCE=1200V IC=200A General Description BYD IGBT Power Module BG200B12LY2R-I provides low switching loss as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection, it is able to take on a perfect performance in various applications up to 20KHz.