Datasheet4U Logo Datasheet4U.com

BF95N50L - N-Channel MOSFET

This page provides the datasheet information for the BF95N50L, a member of the BF95N50T N-Channel MOSFET family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C).

📥 Download Datasheet

Datasheet preview – BF95N50L

Datasheet Details

Part number BF95N50L
Manufacturer BYD
File Size 209.02 KB
Description N-Channel MOSFET
Datasheet download datasheet BF95N50L Datasheet
Additional preview pages of the BF95N50L datasheet.

📁 Similar Datasheet

  • BF959 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR (CDIL)
  • BF959 - VHF Transistor (Motorola Inc)
  • BF959 - VHF Transistor (ON Semiconductor)
  • BF959 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BF900 - Sicherungshalter (Inter Control)
  • BF900 - n-channel dual gate MOSFET (Siliconix)
  • BF901 - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF901R - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF904 - N-channel dual gate MOS-FETs (NXP)
  • BF904A - N-channel dual gate MOS-FETs (NXP)
Other Datasheets by BYD

Full PDF Text Transcription

Click to expand full text
BYD Microelectronics Co., Ltd. BF95N50T/BF95N50L 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.
Published: |