Description
BYD SiC Power Module BM840F12B34U1 provides low switching, which introduce the advanced SiC MOSFET chip, it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz.
Features
- The 3rd Generation Semiconductor Material-Silicon Carbide.
- Blocking Voltage 1200V.
- Low RDS（on）.
- Low Switching Losses.
- Low Qg and Cres.
- Low Inductive Design≤15nH.
- Ag Sintering.
- Tvj op=175ºC.
- Direct Cooled Cu PinFin Base Plate.
- High Performance Si3N4 Ceramic.
- Integrated NTC Temperature Sensor
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BM840F12B34U1 Datasheet
