BM840F12B34U1 Overview
BYD SiC Power Module BM840F12B34U1 provides low switching, which introduce the advanced SiC MOSFET chip, it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz. 概述 比亚迪碳化硅功率模块BM840F12B34U1提供低损和 高短路能力,内含先进的碳化硅MOSFET芯片,在1-30KHZ 频率的应用中表现出优良的性能。.
BM840F12B34U1 Key Features
- The 3rd Generation Semiconductor Material-Silicon Carbide
- Blocking Voltage 1200V
- Low RDS（on）
- Low Switching Losses
- Low Qg and Cres
- Low Inductive Design≤15nH
- Ag Sintering
- Tvj op=175ºC
- Direct Cooled Cu PinFin Base Plate
- High Performance Si3N4 Ceramic