BM840F12B34U1
Description
BYD Si C Power Module BM840F12B34U1 provides low switching, which introduce the advanced Si C MOSFET chip, it is able to take on a perfect performance in various applications with switching frequencies in the range of 1-30KHz.
概述
比亚迪碳化硅功率模块BM840F12B34U1提供低损和 高短路能力,内含先进的碳化硅MOSFET芯片,在1-30KHZ 频率的应用中表现出优良的性能。
Key Features
- The 3rd Generation Semiconductor Material-Silicon Carbide
- Blocking Voltage 1200V
- Low RDS（on）
- Low Switching Losses
- Low Qg and Cres
- Low Inductive Design≤15n H
- Ag Sintering
- Tvj op=175ºC
- Direct Cooled Cu Pin Fin Base Plate
- High Performance Si3N4 Ceramic
- Integrated NTC Temperature Sensor
Applications
- Automotive Application
- AC Motor Control
- Motion/Servo Control
- Maximum applied voltage platform: 750V
关键特性
- 第三代半导体材料-碳化硅
- 阻断电压 1200V
- 低 RDS(on)
- 低开关损耗
- 低 Qg 和 Crss
- 低电感设计≤15n H
- 银烧结工艺
- 最大工作结温 175 ℃
- 直接冷却底板
- 高性能氮化硅陶瓷
- 集成化 NTC 温度传感器
应用
- 汽车级应用
- 电动车/混动车
- 电机驱动
- 最高支持 750V 电压平台
WI-D06F07-H-0123...
