Bae Systems 182A934
The 32K x 8 radiation hardened static RAM is a high performance, low power device designed and fabricated in 0.8 µm Radiation Hardened Complementary Metal Oxide Semiconductor (RHCMOS) technology. The memory can be personalized for either CMOS or Transistor Transistor Logic (TTL) input receivers.FEATURES
167A690 182A934 ProductDESCRIPTION
Other● Read/Write Cycle Times ≤30 ns (-55 °C to 125°C)
● SMD Number 5962H92153
● Asynchronous Operation
● CMOS or TTL Compatible I/O
● Single 5 V ±10% Power Supply
● Low Operating Power
● Packaging Options
● 36-Lead Flat Pack (0.630” x 0.650”)
● 28-Lead DIP, MIL-STD-1835, CDIP2-T28 Radiation
● Fabricated with Bulk CMOS 0.8 µm Process
● Total Dose Hardness through 1x106 rad(Si)
● Neutron Hardness through 1x1014 N/cm2
● Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s
● Soft Error Rate of < 1x10-11 Upsets/Bit-Day
● Dose Rate Survivability through 1x1012 rad(Si)/s
● Latchup Free taS Da aShee Dat DataSheet4U.com
GENERAL DESCRIPTION
BAE SYSTEMS’ device is designed for radiation environments using industry standard functionality. The SRAM operates over the full military temperature range and requires a single 5 V ±10% power supply. Power consumption is typically less than 20 mW/MHz in operation, and less than 10 mW in the low power disabled mode.