BCF020T Overview
BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The...
BCF020T Key Features
- 20 dBm Typical Output Power
- 13.5 dB Typical Power Gain @ 12 GHz
- Low Phase Noise
- 0.3 X 200 Micron Recessed Gate