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BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Datasheet Summary

Features

  • 20 dBm Typical Output Power.
  • 13.5 dB Typical Power Gain @ 12 GHz.
  • Low Phase Noise.
  • 0.3 X 200 Micron Recessed Gate.

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Datasheet preview – BCF020T

Datasheet Details

Part number BCF020T
Manufacturer BeRex
File Size 377.39 KB
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet download datasheet BCF020T Datasheet
Additional preview pages of the BCF020T datasheet.

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Full PDF Text Transcription

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and each wafer is screened to insure compliance with specifications. These chips utilize SI3N4 passivation for increased reliability. Product Features • 20 dBm Typical Output Power • 13.5 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.
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