BeRex BCF020T
BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and each wafer is screened to insure compliance with specifications.| Part No. | BCF020T |
|---|---|
| Datasheet | BCF020T Download |
| Manufacturer |  BeRex |
| Description | HIGH EFFICIENCY HETEROJUNCTION POWER FET |
| Buy | Stock & Price |
FEATURES
● 20 dBm Typical Output Power● 13.5 dB Typical Power Gain @ 12 GHz
● Low Phase Noise
● 0.3 X 200 Micron Recessed Gate
APPLICATIONS
● Commercial● Military / Hi-Rel
● Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V) BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open) BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MINIMUM 40 25 -3.5 TYPICAL 60 35 -2.0 -15 -10 160 MAXIMUM MINIMUM 80 mA mS -0.5 V -11 V -7 V ° C/W BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.4a October 2018 BCF020T ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C) PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE...
