BCF030T Overview
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well suited for either wideband or narrow-band...
BCF030T Key Features
- 21.5 dBm Typical Output Power
- 13.5 dB Typical Power Gain @ 12 GHz
- Low Phase Noise
- 0.3 X 300 Micron Recessed Gate