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BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Datasheet Summary

Features

  • 21.5 dBm Typical Output Power.
  • 13.5 dB Typical Power Gain @ 12 GHz.
  • Low Phase Noise.
  • 0.3 X 300 Micron Recessed Gate.

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Datasheet preview – BCF030T

Datasheet Details

Part number BCF030T
Manufacturer BeRex
File Size 378.67 KB
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet download datasheet BCF030T Datasheet
Additional preview pages of the BCF030T datasheet.

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Full PDF Text Transcription

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for increased reliability. Product Features • 21.5 dBm Typical Output Power • 13.5 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.
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