BCF080T Overview
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The...
BCF080T Key Features
- 26.0 dBm Typical Output Power
- 11.0 dB Typical Power Gain @ 12 GHz
- Low Phase Noise
- 0.3 X 800 Micron Recessed Gate