Datasheet4U Logo Datasheet4U.com

BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Datasheet Summary

Features

  • 26.0 dBm Typical Output Power.
  • 11.0 dB Typical Power Gain @ 12 GHz.
  • Low Phase Noise.
  • 0.3 X 800 Micron Recessed Gate.

📥 Download Datasheet

Datasheet preview – BCF080T

Datasheet Details

Part number BCF080T
Manufacturer BeRex
File Size 378.33 KB
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet download datasheet BCF080T Datasheet
Additional preview pages of the BCF080T datasheet.

📁 Similar Datasheet

  • BCF29 - PNP general purpose transistors (NXP)
  • BCF29 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
  • BCF29 - (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)
  • BCF30 - PNP general purpose transistors (NXP)
  • BCF30 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
  • BCF30 - (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)
  • BCF32 - NPN general purpose transistor (NXP)
  • BCF32 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
  • BCF33 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
  • BCF81 - NPN general purpose transistor (NXP)
Other Datasheets by BeRex
  • BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
  • BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
  • BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
  • BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
  • BCF120T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
  • BCF240T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Full PDF Text Transcription

Click to expand full text
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for increased reliability. Product Features • 26.0 dBm Typical Output Power • 11.0 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.
Published: |