BeRex BCF080T
BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and devices from each wafer are screened to insure reliability.| Part No. | BCF080T |
|---|---|
| Datasheet | BCF080T Download |
| Manufacturer |  BeRex |
| Description | HIGH EFFICIENCY HETEROJUNCTION POWER FET |
| Buy | Stock & Price |
FEATURES
● 26.0 dBm Typical Output Power● 11.0 dB Typical Power Gain @ 12 GHz
● Low Phase Noise
● 0.3 X 800 Micron Recessed Gate
APPLICATIONS
● Commercial● Military / Hi-Rel
● Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 800 µA, Vds = 3V) BVgd Drain Breakdown Voltage (Ig = 0.8 mA, source open) BVgs Source Breakdown Voltage (Ig = 0.8 mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MINIMU M 160 100 -3.5 TYPICAL 240 130 -2.0 -15 -10 61 MAXIMU M 320 -11 -7 UNIT mA mS V V V ° C/W BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 January 2015 Rev. 1.3 BCF080T ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C) PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE...
