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BCF240T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

Datasheet Summary

Features

  • 30.4 dBm Typical Output Power.
  • 9.8 dB Typical Power Gain @ 12 GHz.
  • Low Phase Noise.
  • 0.3 X 2400 Micron Recessed Gate.

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Datasheet preview – BCF240T

Datasheet Details

Part number BCF240T
Manufacturer BeRex
File Size 410.63 KB
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Datasheet download datasheet BCF240T Datasheet
Additional preview pages of the BCF240T datasheet.

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Full PDF Text Transcription

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BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF240T is produced using state of the art metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for increased reliability. Product Features • 30.4 dBm Typical Output Power • 9.8 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.
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