BeRex BCF240T
BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF240T is produced using state of the art metallization and devices from each wafer are screened to insure reliability.| Part No. | BCF240T |
|---|---|
| Datasheet | BCF240T Download |
| Manufacturer |  BeRex |
| Description | HIGH EFFICIENCY HETEROJUNCTION POWER FET |
| Buy | Stock & Price |
FEATURES
● 30.4 dBm Typical Output Power● 9.8 dB Typical Power Gain @ 12 GHz
● Low Phase Noise
● 0.3 X 2400 Micron Recessed Gate
APPLICATIONS
● Commercial● Military / Hi-Rel
● Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 2400 µA, Vds = 3V) BVgd Drain Breakdown Voltage (Ig = 2.4 mA, source open) BVgs Source Breakdown Voltage (Ig = 2.4 mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MINIMUM 480 -3.5 TYPICAL 720 400 -2.0 -15 -10 23 MAXIMUM UNIT 960 mA mS V -11 V -7 V ° C/W BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 October 2018 Rev. 1.4a BCF240T ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C) PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE...
