B15N10F
Description
B15N10D/F bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer,tele, industrial power supplies and LED backlighting.
Key Features
- RDS(ON)=105mΩ@VGS=10V High Density Cell Design for Low RDS(ON) Exceptional On-Resistance and Maximum DC Current TO-252-3/TO-220F-3 Package
