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B3942 - N- and P-Channel 30-V (D-S) MOSFET

General Description

The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)=25mΩ@VGS=10V (N-Ch) RDS(ON)=40mΩ@VGS=4.5V (N-Ch) RDS(ON)=35mΩ@VGS=-10V (P-Ch) RDS(ON)=58mΩ@VGS =-4.5V (P-Ch) Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Pin Configuration.

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Datasheet Details

Part number B3942
Manufacturer BiTEK
File Size 61.30 KB
Description N- and P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet B3942 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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B3942 N- and P-Channel 30-V (D-S) MOSFET General Description The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features RDS(ON)=25mΩ@VGS=10V (N-Ch) RDS(ON)=40mΩ@VGS=4.5V (N-Ch) RDS(ON)=35mΩ@VGS=-10V (P-Ch) RDS(ON)=58mΩ@VGS =-4.