B6010D - N-channel MOSFET

BiTEK

General Description

The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package.

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B6010D n-channel mosfet by BiTEK - Datasheet Preview

Datasheet Details

Part number	B6010D
Manufacturer	BiTEK
File Size	58.54 KB
Description	N-channel MOSFET
Datasheet	B6010D Datasheet

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Other Datasheets by BiTEK

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B6010K	N-channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.