BMT1417B26 - SILICON MICROWAVE POWER TRANSISTOR

Key Features

Common Base, Class C Package Configuration.
High Output Power 26 W @ 1.4 to 1.7 GHz.
High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t.
High Gain GPE = 7.0 dB to 8.2 dB.
High Reliability Gold Metallization Nitride Passivation.
Diffused Ballast Resistors.
BeO Packaging.
Built-In Matching Network Absolute Maximum Ratings: SYMBOL.

BMT1417B26 silicon microwave power transistor by Bipolarics - Datasheet Preview

Datasheet Details

Part number	BMT1417B26
Manufacturer	Bipolarics
File Size	396.46 KB
Description	SILICON MICROWAVE POWER TRANSISTOR
Datasheet	BMT1417B26 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Packaging • Built-In Matching Network Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance 50 28 3.5 4.16 200 -65 to 200 6.