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BMT1417B26 - SILICON MICROWAVE POWER TRANSISTOR

Datasheet Summary

Features

  • Common Base, Class C Package Configuration.
  • High Output Power 26 W @ 1.4 to 1.7 GHz.
  • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t.
  • High Gain GPE = 7.0 dB to 8.2 dB.
  • High Reliability Gold Metallization Nitride Passivation.
  • Diffused Ballast Resistors.
  • BeO Packaging.
  • Built-In Matching Network Absolute Maximum Ratings: SYMBOL.

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Datasheet preview – BMT1417B26

Datasheet Details

Part number BMT1417B26
Manufacturer Bipolarics
File Size 396.46 KB
Description SILICON MICROWAVE POWER TRANSISTOR
Datasheet download datasheet BMT1417B26 Datasheet
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www.DataSheet4U.com BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Packaging • Built-In Matching Network Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance 50 28 3.5 4.16 200 -65 to 200 6.
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