Datasheet Summary
100V N-Channel Enhancement Mode MOSFET
DESCRIPTION
The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology. The high density process is especially able to minize on-state resistance.These devices are. especially suited for low voltage application power management DC-DC converters.
FEATURE
100V/15 A,RDS(ON)=80.0mΩ (typ.)@VGS=10V 100V/8A, RDS(ON)=115mΩ(typ.)@VGS= 4.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS pliance SOP8 ,SOT23 andTO252 package design 100% UIS Tested 100% Rg tested
APPLICATIONS
Power Management DC/DC Converter Load...