BM4953 Datasheet | Bookly

DESCRIPTION Dual P Channel Enhancement Mode MOSFET -5.0A BM4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook puter power management, LCD-TV , LCD- Monitor and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE z -30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10V z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5V z Super high density cell design for extremely low RDS(ON)...