BU48
BU48 is NPN SILICON POWER TRANSISTORS manufactured by Bourns.
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BUV48, BUV48A NPN SILICON POWER TRANSISTORS
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- Rugged Triple-Diffused Planar Construction 15 A Continuous Collector Current 1000 Volt Blocking Capability
SOT-93 PACKAGE (TOP VIEW) 1
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-emitter voltage (VBE = 0 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Non repetitive accidental peak surge current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A SYMBOL VCES VCER VCEO IC ICM IB IBM ICSM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 15 30 4 20 55 125 -65 to +150 -65 to +150 UNIT V V V A A A A A W °C °C
PRODUCT
Data Sheet 4 U .
INFORMATION
AUGUST 1978
- REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER VCEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current IC = 200 m A VCE = 850 V ICES VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 850 V ICER Collector-emitter cut-off current Emitter cut-off current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE = 1000 V VCE = 850 V VCE = 1000 V IEBO VEBO VEB = IE = IB = VCE(sat) IB = IB = IB = VBE(sat) ft Cob IB = IB = VCE = VCB = 5V 50 m A 2A 3A 1.6 A 2.4 A 2A 1.6 A 10 V 20 V TEST CONDITIONS L = 25 m H VBE = 0 VBE = 0 VBE = 0 VBE = 0 RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω RBE = 10 Ω IC = 0 IC = 0 IC = IC = IC = IC = IC = IC = 10 A 15 A 8A 12 A 10 A 8A (see Notes 3...
