BUV47A - NPN SILICON POWER TRANSISTORS

Bourns

Download the BUV47A datasheet PDF. This datasheet also covers the BUV47 variant, as both devices belong to the same npn silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

BUV47A npn silicon power transistors by Bourns - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BUV47_BournsElectronicSolutions.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BUV47A
Manufacturer	Bourns
File Size	315.19 KB
Description	NPN SILICON POWER TRANSISTORS
Datasheet	BUV47A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BUV47A	SILICON POWER TRANSISTOR	SavantIC
BUV47A	NPN Transistor	INCHANGE
BUV47AFI	NPN Transistor	INCHANGE
BUV47	SILICON POWER TRANSISTOR	SavantIC
BUV47	NPN Transistor	INCHANGE

Other Datasheets by Bourns

Part Number	Description
BUV47	NPN SILICON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.