BW24
BW24 is PNP SILICON POWER DARLINGTONS manufactured by Bourns.
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BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS
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Designed for plementary Use with BDW23, BDW23A, BDW23B and BDW23C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum h FE of 750 at 2 A, 3 V
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDW24 Collector-base voltage (IE = 0) BDW24A BDW24B BDW24C BDW24 Collector-emitter voltage (IB = 0) BDW24A BDW24B BDW24C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 m W/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
PRODUCT
Data Sheet 4 U .
INFORMATION
MAY 1989
- REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDW24 V(BR)CEO IC = -100 m A IB = 0 (see Note 3) BDW24A BDW24B BDW24C VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCB = -45 V ICBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VCB = -60 V VCB = -80 V VCB = -100 V IEBO VEB = VCE = VCE = VCE = IB = -5 V -3 V -3 V -3 V -8...