Bourns BUX85
NPN SILICON POWER TRANSISTOR
| Part No. | BUX85 |
|---|---|
| Datasheet | BUX85 Download |
| Manufacturer |  Bourns |
| Description | NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
BUX85 NPN SILICON POWER TRANSISTOR
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● 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES V CEO IC ICM Ptot Tj Tstg VALUE 1000 1000 450 2 3 40 -65 to +150 -65 to +150 UNIT V V V A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUX85 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2.
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● 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES V CEO IC ICM Ptot Tj Tstg VALUE 1000 1000 450 2 3 40 -65 to +150 -65 to +150 UNIT V V V A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUX85 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2.
