TISP4011H1BJ Datasheet | Bourns

- Ro HS PLIANT VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4011H1BJ VLV Overvoltage Protector Series General Information The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on-state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. SMB Package (Top View) R(B) 1 Device Symbol 2 T(A) MDXXBGE Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage Non-repetitive peak on-state pulse current 10/1000 μs 2/10 μs Junction temperature Storage temperature Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter ID Leakage current V(BO) I(BO) VT IH Coff Breakover voltage Breakover current On-state voltage Holding current Off-state capacitance Test Conditions VD = VDRM di/dt = ±1 m A/μs di/dt = ±1 m A/μs IT = ±5 A IT = ±5 A, di/dt = ±1 m A/μs Vd = 0 V, f = 1 MHz, 1 Vrms SD4XAA Terminals T and R correspond to the alternative line designators of A and B Symbol VDRM IPPSM TJ Tstg Value ±5.25 ±100 ±500 -40 to +150 -55 to +150 Unit V °C °C Min. 20 Typ. 1 9 75 60 110 Max. 10.5...