Datasheet Summary
- RoHS PLIANT
TISP4C115H3BJ THRU TISP4C350H3BJ
LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CxxxH3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
Device Name
TISP4C115H3BJ † TISP4C125H3BJ † TISP4C145H3BJ † TISP4C165H3BJ TISP4C180H3BJ † TISP4C220H3BJ † TISP4C250H3BJ † TISP4C290H3BJ † TISP4C350H3BJ †
VDRM V
90 100 120 135 145 180 190 220 275
V(BO) V
115 125 145 165 180 220 250 290 350
SMB Package (Top View)
R1 Device Symbol
2T
MD-SMB-004-a
Rated for International Surge Wave Shapes
Wave Shape
2/10 10/160 10/700 10/560 10/1000
Standard
GR-1089-CORE...