Datasheet4U Logo Datasheet4U.com

BS616LV4023 - Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Datasheet Summary

Description

BS616LV4023 Very low operation voltage : 2.4 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns

Features

  • S Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable.

📥 Download Datasheet

Datasheet preview – BS616LV4023

Datasheet Details

Part number BS616LV4023
Manufacturer Brilliance Semiconductor
File Size 219.88 KB
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Datasheet download datasheet BS616LV4023 Datasheet
Additional preview pages of the BS616LV4023 datasheet.

📁 Similar Datasheet

  • BS616LV4017 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit (BSI)
  • BS600 - Water Bath Instruction Manual (Yamato)
  • BS6004 - PVC Cable (Linnet)
  • BS6004 - Cable (Nexans)
  • BS62LV1605 - Very Low Power/Voltage CMOS SRAM 2M X 8 bit (Brilliance)
  • BS62LV4007 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit (BSI)
  • BS62LV8006 - Very Low Power/Voltage CMOS SRAM 1M X 8 bit (Brilliance)
  • BS62UV1027 - Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit (Brilliance)
  • BS65F2042 - NFC Reader Touch Flash MCU (Holtek Semiconductor)
  • BS660 - Water Bath Instruction Manual (Yamato)
Other Datasheets by Brilliance Semiconductor
  • BS616LV4020 - Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
  • BS616LV4021 - Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
  • BS616LV4025 - Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
  • BS616LV4010 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit
  • BS616LV4011 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit
  • BS616LV4015 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit
  • BS616LV1010 - Very Low Power/Voltage CMOS SRAM
  • BS616LV1623 - Very Low Power/Voltage CMOS SRAM

Full PDF Text Transcription

Click to expand full text
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4023 • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=3.0V -10 100ns (Max.) at Vcc=3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
Published: |