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BS616UV8011 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit

Datasheet Summary

Description

BS616UV8011 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns

Features

  • S Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit.

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Datasheet Details

Part number BS616UV8011
Manufacturer Brilliance Semiconductor
File Size 221.20 KB
Description Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
Datasheet download datasheet BS616UV8011 Datasheet
Additional preview pages of the BS616UV8011 datasheet.

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Full PDF Text Transcription

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616UV8011 • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2,CE1 and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.
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