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BS62UV1027 - Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit

General Description

The BS62UV1027 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Key Features

  • S Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1027.
  • Data retention supply voltage as low as 1.2V.
  • Easy expansion with CE2, CE1 and OE options.
  • Wide Vcc operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V (Vcc_min. =1.65V at 25oC).
  • Ultra low power consumption : Vcc = 2.0V C-grade : 7mA (Max. ) operating current I -grade : 8mA (Max. ) operating current 0.05uA (Typ. ) CMOS standby current Vcc = 3.0V C-grade : 13mA (Max. ) operating current I-.

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Datasheet Details

Part number BS62UV1027
Manufacturer Brilliance
File Size 434.43 KB
Description Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
Datasheet download datasheet BS62UV1027 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1027 • Data retention supply voltage as low as 1.2V • Easy expansion with CE2, CE1 and OE options • Wide Vcc operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V (Vcc_min.=1.65V at 25oC) • Ultra low power consumption : Vcc = 2.0V C-grade : 7mA (Max.) operating current I -grade : 8mA (Max.) operating current 0.05uA (Typ.) CMOS standby current Vcc = 3.0V C-grade : 13mA (Max.) operating current I- grade : 15mA (Max.) operating current 0.10uA (Typ.) CMOS standby current • High speed access time : -85 85ns (Max.) -10 100ns (Max.