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ACPL-P349 - 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler

General Description

The Broadcom® ACPL-P349/W349 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage.

This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications.

Key Features

  • 2.5-A maximum peak output current.
  • Wide operating VCC range: 15V to 30V.
  • 110-ns maximum propagation delay.
  • 50-ns maximum propagation delay difference.
  • Rail-to-rail output voltage.
  • 100 kV/µs minimum Common Mode Rejection (CMR) at VCM = 1500V.
  • LED current input with hy.

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Datasheet Details

Part number ACPL-P349
Manufacturer Broadcom
File Size 1.08 MB
Description 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler
Datasheet download datasheet ACPL-P349 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom® ACPL-P349/W349 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT with ratings up to 1200V/100A. Features  2.