AFBR-S4N33C013 Key Features
- High PDE of more than 54% at 420 nm
- Chip-sized package (CSP)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage, 180 mV
- Excellent uniformity of gain
- With TSV technology (4-side tilable), with high fill
- Size 3.14 × 3.14 mm2
- Cell pitch 30 × 30 µm2
- Highly transparent glass protection layer
- Operating temperature range from -40°C to +85°C