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AFBR-S4N44C013 - NUV-HD Single Silicon Photo Multiplier

Description

The Broadcom® AFBR-S4N44C013 is a silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.The active area is 3.72 × 3.72 mm2.

High packing density of the single chip is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP).

Features

  • High PDE of more than 55% at 420 nm.
  • Excellent SPTR and CRT.
  • Excellent uniformity of breakdown voltage, 180 mV (3 sigma).
  • Excellent uniformity of gain.
  • With TSV technology (4-side tilable with high fill factors).
  • Size 3.86 × 3.86 mm2.
  • Cell pitch 30 × 30 µm2.
  • Highly transparent glass protection layer.
  • Chip sized package (CSP).
  • Operating temperature range from.
  • 20°C to +50°C.
  • RoHS and REACH compliant.

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Datasheet preview – AFBR-S4N44C013

Datasheet Details

Part number AFBR-S4N44C013
Manufacturer Broadcom
File Size 720.66 KB
Description NUV-HD Single Silicon Photo Multiplier
Datasheet download datasheet AFBR-S4N44C013 Datasheet
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AFBR-S4N44C013 NUV-HD Single Silicon Photo Multiplier Data Sheet Description The Broadcom® AFBR-S4N44C013 is a silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.The active area is 3.72 × 3.72 mm2. High packing density of the single chip is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N44C013 CSPs almost without any edge losses. The passivation layer is made by a glass that is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with a high sensitivity toward the blue- and near-UV region of the light spectrum.
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