AFBR-S4N44C013 Key Features
- High PDE of more than 55% at 420 nm
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage, 180 mV
- Excellent uniformity of gain
- With TSV technology (4-side tilable with high fill factors)
- Size 3.86 × 3.86 mm2
- Cell pitch 30 × 30 µm2
- Highly transparent glass protection layer
- Chip sized package (CSP)
- Operating temperature range from -20°C to +50°C