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AFBR-S4N66C013 - NUV-HD Single Silicon Photo Multiplier

Description

The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.

The active area is 6.0 × 6.0 mm2.

High packing density of the single chips is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP).

Features

  • High PDE of more than 55% at 420 nm.
  • Excellent SPTR and CRT.
  • Excellent uniformity of breakdown voltage, 210 mV (3 sigma).
  • Excellent uniformity of gain.
  • With TSV technology (4-side tilable, with high fill factors).
  • Size 6.14 × 6.14 mm2.
  • Cell pitch 30 × 30 µm2.
  • Highly transparent glass protection layer.
  • Chip sized package (CSP).
  • Operating temperature range from.
  • 40°C to +85°C.
  • RoHS and REACH compliant.

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Datasheet preview – AFBR-S4N66C013

Datasheet Details

Part number AFBR-S4N66C013
Manufacturer Broadcom
File Size 485.10 KB
Description NUV-HD Single Silicon Photo Multiplier
Datasheet download datasheet AFBR-S4N66C013 Datasheet
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AFBR-S4N66C013 NUV-HD Single Silicon Photo Multiplier Data Sheet Description The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons. The active area is 6.0 × 6.0 mm2. High packing density of the single chips is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N66C013 CSPs almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.
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