AFBR-S4N66C013 Key Features
- High PDE of more than 55% at 420 nm
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage, 210 mV
- Excellent uniformity of gain
- With TSV technology (4-side tilable, with high fill
- Size 6.14 × 6.14 mm2
- Cell pitch 30 × 30 µm2
- Highly transparent glass protection layer
- Chip sized package (CSP)
- Operating temperature range from -40°C to +85°C