Broadcom AFBR-S4N66P024M
AFBR-S4N66P024M is a Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons. The passivation layer is a clear epoxy mold compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum.| Part No. | AFBR-S4N66P024M |
|---|---|
| Datasheet | AFBR-S4N66P024M Download |
| Manufacturer |  Broadcom |
| Description | 2x1 NUV-MT Silicon Photomultiplier Array |
| Buy | Stock & Price |
DESCRIPTION
The Broadcom® Two 6 mm × 6 mm SiPMs are arranged in a 2×1 element array with a pitch of 7 mm. Larger areas can be covered with a SiPM-pitch of 7 mm by tiling multiple AFBR-S4N66P024M arrays. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This product is lead-free and RoHS compliant. Block Diagram Figure 1: AFBR-S4N66P024M Block Diagram of Single SiPM ElementFEATURES
● 2×1 SiPM array● Array size 13.54 mm × 6.54 mm
● High PDE (63% at 420 nm)
● Excellent SPTR and CRT
● Excellent uniformity of breakdown voltage
● Excellent uniformity of gain
● Four-side tilable, with high fill factors
● Cell pitch 40 µm
● Highly transparent epoxy protection layer
● Operating temperature range from 0°C to +60°C
● RoHS, CFM, and REACH compliant
APPLICATIONS
● X-ray and gamma ray...
