AFBR-S4N66P024M Datasheet PDF (2x1 NUV-MT Silicon Photomultiplier Array)

AFBR-S4N66P024M - 2x1 NUV-MT Silicon Photomultiplier Array

Description

The Broadcom® AFBR-S4N66P024M is a Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons.

Two 6 mm × 6 mm SiPMs are arranged in a 2×1 element array with a pitch of 7 mm.

Features

2×1 SiPM array.
Array size 13.54 mm × 6.54 mm.
High PDE (63% at 420 nm).
Excellent SPTR and CRT.
Excellent uniformity of breakdown voltage.
Excellent uniformity of gain.
Four-side tilable, with high fill factors.
Cell pitch 40 µm.
Highly transparent epoxy protection layer.
Operating temperature range from 0°C to +60°C.
RoHS, CFM, and REACH compliant.

Datasheet Details

Part number	AFBR-S4N66P024M
Manufacturer	Broadcom
File Size	720.91 KB
Description	2x1 NUV-MT Silicon Photomultiplier Array
Datasheet	AFBR-S4N66P024M Datasheet
Additional preview pages of the AFBR-S4N66P024M datasheet.

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Full PDF Text Transcription

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AFBR-S4N66P024M 2×1 NUV-MT Silicon Photomultiplier Array Data Sheet Description The Broadcom® AFBR-S4N66P024M is a Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons. Two 6 mm × 6 mm SiPMs are arranged in a 2×1 element array with a pitch of 7 mm. Larger areas can be covered with a SiPM-pitch of 7 mm by tiling multiple AFBR-S4N66P024M arrays. The passivation layer is a clear epoxy mold compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum.

Published: Sep 21, 2023 |