The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX 600V RDS(ON) (Max.) 700Ω IDSS,min 12mA
Applications
• Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom
Absolute Maximum Ratings
Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Drain-to-Source Voltage Drain-to-Gate Voltage
[1]
TA=25 ℃ unless otherwise specified
Parameter
[1]
DMS05N60 600 600 0.020 0.081 0.50 ±20 300 -55~150
Unit V V A W V
Continuous Drain Current Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Soldering Temperature Distance of 1.
DMS05N60 Datasheet
