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DMS05N60 - N-Channel MOSFET

Datasheet Summary

Features

  • Depletion Mode (Normally On).
  • Advanced Planar Technology.
  • Rugged Poly-silicon Gate Cell Structure.
  • Fast Switching Speed.
  • RoHS Compliant/Lead Free.
  • ESD Sensitive BVDSX 600V RDS(ON) (Max. ) 700Ω IDSS,min 12mA.

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Datasheet preview – DMS05N60

Datasheet Details

Part number DMS05N60
Manufacturer Bruckewell Technology
File Size 546.87 KB
Description N-Channel MOSFET
Datasheet download datasheet DMS05N60 Datasheet
Additional preview pages of the DMS05N60 datasheet.

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    Full PDF Text Transcription

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    DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX 600V RDS(ON) (Max.) 700Ω IDSS,min 12mA Applications • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom Absolute Maximum Ratings Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Drain-to-Source Voltage Drain-to-Gate Voltage [1] TA=25 ℃ unless otherwise specified Parameter [1] DMS05N60 600 600 0.020 0.081 0.50 ±20 300 -55~150 Unit V V A W V Continuous Drain Current Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Soldering Temperature Distance of 1.
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