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MSF6N60 - N-Channel Enhancement Mode Power MOSFET

Description

The MSF6N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • : VDS=600V.
  • BVDSS=650V typically @ Tj=150°C.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet preview – MSF6N60

Datasheet Details

Part number MSF6N60
Manufacturer Bruckewell Technology
File Size 1.25 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSF6N60 Datasheet
Additional preview pages of the MSF6N60 datasheet.

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Full PDF Text Transcription

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Bruckewell Technology Corp., Ltd. http://www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MSF6N60 ●Description The MSF6N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications ID=5.5A ●FEATURES: VDS=600V • BVDSS=650V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package ●APPLICATION: • Open Framed Power Supply • Adapter • STB RDS(on)max = 2.
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