MSF6N60
Key Features
- BVDSS=650V typically @ Tj=150°C
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
- Open Framed Power Supply
- STB RDS(on)max = 2.0 @VGS = 10 V TO220F
- Part: MSF6N60
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: Bruckewell Technology
- Size: 1.25 MB