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MSF8N80-G Datasheet 800v N-channel MOSFET

Manufacturer: Bruckewell Technology

Overview: MSF8N80-G 800V N-Channel MOSFET GENERAL.

General Description

This Power MOSFET is produced using the advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.

These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

Key Features

  • RDS(on) (typ 1.3 Ω )@VGS=10V.
  • Gate Charge (Typical 39nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C).
  • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48.
  • 55.

More Datasheets from Bruckewell Technology

Part Number Description
MSF6N60 N-Channel Enhancement Mode Power MOSFET
MSF6N70 700V N-Channel MOSFET

MSF8N80-G Distributor