MSF8N80-G
Description
This Power MOSFET is produced using the advanced planar stripe, DMOS technology.
Key Features
- RDS(on) (typ 1.3 Ω )@VGS=10V
- Gate Charge (Typical 39nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Halogen Free
