MSF8N80-G Overview
This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
MSF8N80-G Key Features
- RDS(on) (typ 1.3 Ω )@VGS=10V
- Gate Charge (Typical 39nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Halogen Free