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MSF8N80-G - 800V N-Channel MOSFET

Description

This Power MOSFET is produced using the advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.

Features

  • RDS(on) (typ 1.3 Ω )@VGS=10V.
  • Gate Charge (Typical 39nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C).
  • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48.
  • 55.

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Datasheet Details

Part number MSF8N80-G
Manufacturer Bruckewell Technology
File Size 790.09 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet MSF8N80-G Datasheet

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Full PDF Text Transcription

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MSF8N80-G 800V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. FEATURES • RDS(on) (typ 1.
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