Description
The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- RoHS compliant / Halogen free package available 1.Gate 2. Drain 3. Source
Symbol
VDSS VGS ID
Parameter
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C)
Value
600 ±30 4.5 2.6 18 33 4.0 10 4.5 300
Units
V V A A A mJ A mJ V/ns °C
IDM EAS IAR EAR dv/dt TL
Drain Current Pulsed Single.
MSU4N60 Datasheet
