Description
The MSU6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- RoHS compliant / Halogen free package available
1.Gate 2. Drain 3. Source
Symbol VDSS VGS ID Drain to Source Voltage Gate to Source Voltage
Parameter
Value 700 ±30 6.0 4.8 28 230 7.0 14.7 4.5 300
Units V V A A A mJ A mJ V/ns °C
Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C)
IDM EAS IAR EAR dv/dt TL
Drain Current Pulsed Si.
MSU6N70 Datasheet
