MS6N80 - N-Channel MOSFET

Description

The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

Originative New Design.
Very Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Unrivalled Gate Charge : 37nC (Typ. ).
Extended Safe Operating Area.
RoHS compliant package.

Bruckewell

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Datasheet Details

Part number	MS6N80
Manufacturer	Bruckewell
File Size	0.96 MB
Description	N-Channel MOSFET
Datasheet	MS6N80 Datasheet
Additional preview pages of the MS6N80 datasheet.

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Full PDF Text Transcription

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MS6N80 800V N-Channel MOSFET Description The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 37nC (Typ.

Published: May 20, 2016 |