MS6N90 Description
The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.
MS6N90 Key Features
- RDS(on) (Max 2.4 Ω )@VGS=10V
- Gate Charge (Typical 33nC)
- Excellent Switching Characteristics
- Improved dv/dt Capability, High
- Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature
- Range (150°˚C)
- RoHS pliant package Application
- Open Framed Power Supply