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MS6N90 - N-Channel MOSFET

Description

The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(on) (Max 2.4 Ω )@VGS=10V.
  • Gate Charge (Typical 33nC).
  • Excellent Switching Characteristics.
  • Improved dv/dt Capability, High.
  • Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature.
  • Range (150°˚C).
  • RoHS compliant package.

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Datasheet preview – MS6N90

Datasheet Details

Part number MS6N90
Manufacturer Bruckewell
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet MS6N90 Datasheet
Additional preview pages of the MS6N90 datasheet.

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Full PDF Text Transcription

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MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 2.
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