MS7N80 - N-Channel MOSFET

Bruckewell

General Description

The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

Originative New Design.
Very Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Unrivalled Gate Charge : 37nC (Typ. ).
Extended Safe Operating Area.
Lower RDS(ON) : 1.70 Ω (Typ. ) @VGS=10V.
100% Avalanche Tested.
RoHS compliant package.

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MS7N80 n-channel mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MS7N80
Manufacturer	Bruckewell
File Size	937.79 KB
Description	N-Channel MOSFET
Datasheet	MS7N80 Datasheet

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Full PDF Text Transcription (Reference)

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MS7N80 800V N-Channel MOSFET Description The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 37nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 1.70 Ω (Typ.