Download MS7N80 Datasheet PDF
MS7N80 page 2
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MS7N80 page 3
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MS7N80 Key Features

  • Originative New Design
  • Very Low Intrinsic Capacitances
  • Excellent Switching Characteristics
  • Unrivalled Gate Charge : 37nC (Typ.)
  • Extended Safe Operating Area
  • Lower RDS(ON) : 1.70 Ω (Typ.) @VGS=10V
  • 100% Avalanche Tested
  • RoHS pliant package Application
  • Adapter
  • Switching Mode Power Supply Packing &

MS7N80 Description

The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.