MS8N50 Key Features
- BVDSS=550V typically @ Tj=150°C
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
- Ballast
- Inverter
- Part: MS8N50
- Manufacturer: Bruckewell Technology
- Size: 367.48 KB
Related Bruckewell Technology Datasheets
| Part Number | Description |
|---|---|
| MS8N60 | N-Channel MOSFET |
MS8N50 Description
The MS8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.