MS9N90 Datasheet (N-Channel MOSFET) | Bruckewell Technology

Part: MS9N90
Manufacturer: Bruckewell Technology
Size: 461.02 KB

MS9N90 Key Features

RDS(on) (Max 1.4 Ω )@VGS=10V
Gate Charge (Typical 47nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
RoHS pliant package Application
Adapter
Switching Mode Power Supply Packing &

Related Bruckewell Technology Datasheets

Part Number	Description
MS9N20E	Dual N-Channel MOSFET
MS90N06	N-Channel 60-V (D-S) MOSFET

MS9N90 Description

The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.