MS9N90
Description
The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Key Features
- RDS(on) (Max 1.4 Ω )@VGS=10V
- Gate Charge (Typical 47nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- RoHS pliant package Application
- Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box
