MSC49N02X
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 40V,140A, RDS(ON) =2.2mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- RoHS pliant package Applications
- LED applications
- Motor Drive Applications PPAK5X6 Graphic symbol
