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MSC49N02X - 40V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 40V,140A, RDS(ON) =2.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • RoHS compliant package.

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Datasheet Details

Part number MSC49N02X
Manufacturer Bruckewell
File Size 453.49 KB
Description 40V N-Channel MOSFETs
Datasheet download datasheet MSC49N02X Datasheet

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MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 40V,140A, RDS(ON) =2.