MSC49N60X
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 40V,140A, RDS(ON) =2.8mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- RoHS pliant package Applications
- MB / VGA / Vcore
- POL Applications
