MSC49N60X - 40V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

40V,140A, RDS(ON) =2.8mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
RoHS compliant package.

Bruckewell

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Datasheet Details

Part number	MSC49N60X
Manufacturer	Bruckewell
File Size	555.88 KB
Description	40V N-Channel MOSFETs
Datasheet	MSC49N60X Datasheet
Additional preview pages of the MSC49N60X datasheet.

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Full PDF Text Transcription

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MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 40V,140A, RDS(ON) =2.

Published: Sep 20, 2016 |