MSD20N10
Description
The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all mercial-industrial applications
Features
- Low r DS(on) trench technology
- Low thermal impedance
- Fast switching speed
- Ro HS pliant package Application
- Po E Power Sourcing Equipment
- Po E Powered Devices
- Tele DC/DC converters
- White LED boost converters Package type：TO-252 Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box
Graphic symbol
Publication Order Number: [MSD20N10]
© Bruckewell Technology Corporation Rev. A -2014
N-Channel 100-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source...
