MSD20N10 - N-Channel 100-V (D-S) MOSFET

Bruckewell

General Description

The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
RoHS compliant package.

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MSD20N10 n-channel 100-v (d-s) mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MSD20N10
Manufacturer	Bruckewell
File Size	673.74 KB
Description	N-Channel 100-V (D-S) MOSFET
Datasheet	MSD20N10 Datasheet

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Other Datasheets by Bruckewell

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MSD4N60	600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSD20N10 N-Channel 100-V (D-S) MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Application • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Package type：TO-252 Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol Publication Order Number: [MSD20N10] © Bruckewell Technology Corporation Rev.