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MSE20N06N - Dual N-Channel 20-V (D-S) MOSFET

Features

  • Low RDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet preview – MSE20N06N

Datasheet Details

Part number MSE20N06N
Manufacturer Bruckewell
File Size 439.00 KB
Description Dual N-Channel 20-V (D-S) MOSFET
Datasheet download datasheet MSE20N06N Datasheet
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    Full PDF Text Transcription

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    MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: •Battery Powered Instruments •Portable Computing •Mobile Phones •GPS Units and Media Players Bruckewell Technology Corp., Ltd. Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Electrical Characteristics Bruckewell Technology Corp., Ltd. Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. • Characteristic Curves Bruckewell Technology Corp., Ltd.
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