MSW9N90 Datasheet | Bruckewell Technology

900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features - RDS(on) (Max 1.4 Ω )@VGS=10V - Gate Charge (Typical 45nC) - Improved dv/dt Capability, High Ruggedness - 100% Avalanche Tested - Maximum Junction Temperature Range (150˚C) - RoHS pliant package Package type：TO-247 Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol TO-247 TO-3P Publication Order Number: [MSW9N90] © Bruckewell Technology Corporation Rev. A -2014 900V N-Channel MOSFET MAXIMUM RATINGS AND...