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MSW9N90 - 900V N-Channel MOSFET

Description

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

These devices are well suited for high efficiency switch mode power supplies.

Features

  • RDS(on) (Max 1.4 Ω )@VGS=10V.
  • Gate Charge (Typical 45nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150˚C).
  • RoHS compliant package Package type：TO-247 Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol TO-247 TO-3P Publication Order Number: [MSW9N90] © Bruckewell Technology Corporation Rev. A -2014 MSW9N90 900V N-Channel MOSFET.

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Datasheet Details

Part number MSW9N90
Manufacturer Bruckewell
File Size 504.28 KB
Description 900V N-Channel MOSFET
Datasheet download datasheet MSW9N90 Datasheet

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MSW9N90 900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charge (Typical 45nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150˚C) • RoHS compliant package Package type：TO-247 Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol TO-247 TO-3P Publication Order Number: [MSW9N90] © Bruckewell Technology Corporation Rev.
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