70N03
Features
- VDS (V) = 30V
- ID = 33A (VGS = 10V)
- RDS(ON) ＜ 4.3mΩ (VGS = 10V)
- RDS(ON) ＜ 6.5mΩ (VGS = 4.5V)
+9.70 0.2 -0.2
- Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
Ta=25℃ Tc=70℃
Tc=25℃ Ta=70℃ t ≤ 10 sec Steady State
Note.1: Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol VDS VGS
IDM PD
Rth JA
Rth JC TJ Tstg
Rating 30
±20 33 70 100 88 8.3 18 50 1.5 150
-55 to 150
Unit V A W
℃/W ℃
70N03 N-Channel MOSFET
- Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current Gate Threshold Voltage
IGSS VGS(th)
Static Drain-Source On-Resistance
RDS(On)...
