CASS CS2609
N- & P-Channel Trench Power MOSFET
| Part No. | CS2609 |
|---|---|
| Datasheet | CS2609 Download |
| Manufacturer | CASS |
| Description | N- & P-Channel Trench Power MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V● VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V
● Super high dense cell design for extremely low RDS(ON)
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Schematic Diagram Application
● Battery protection
● Load switch
● Power management Package Marking and Ordering Information Device Marking Device Device Package 2609 CS2609 TSOP-6 Reel Size -- Tape width -- Quantity --
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (Note 1) PD Maximum Power Dissipation TJ,TSTG Operating Junction and Storage Temperature Range N-ch P-ch 20 -20 ±12 ±12 2.5 -2.5
