CS2609 Description
CS2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel).
CS2609 Key Features
- VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V
- VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V
- Super high dense cell design for extremely low RDS(ON)
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
- Battery protection
- Load switch
- Power management