CS40N27 - N-Channel Trench Power MOSFET

General Description

The CS40N27 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .

Key Features

VDS=40V; ID=170A@ VGS=10V; RDS(ON).

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CS40N27 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CS40N27
Manufacturer	CASS
File Size	580.14 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CS40N27 Datasheet

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N-Channel Trench Power MOSFET General Description The CS40N27 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=40V; ID=170A@ VGS=10V; RDS(ON)<3.6mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS40N27 To-220 Top View Schematic Diagram VDSS = 40V IDSS = 170A RDS(ON)= 3.0mΩ Package Marking and Ordering Information Device Marking Device Device Package CS40N27 CS40N27 TO-220 Reel Size - Table 1.