CS48N18 - N-Channel Trench Power MOSFET

General Description

The CS48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

VDS=70V；ID=158A@ VGS=10V； RDS(ON).

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CS48N18 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CS48N18
Manufacturer	CASS
File Size	646.57 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CS48N18 Datasheet

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N-Channel Trench Power MOSFET General Description The CS48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=158A@ VGS=10V； RDS(ON)<4.0mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS48N18 To-220 Top View Schematic Diagram VDSS = 70V IDSS = 158A RDS(ON) = 3.3mΩ Package Marking and Ordering Information Device Marking Device Device Package CS48N18 48N18 TO-220 Reel Size - Table 1.